???????????????????????????Technion-Israel Institute of Technology?????????????????4????????????????????AlGaN????????????????QCD????????????2018??12??7???????IEEE Electron Device Letters???????????????https://ieeexplore.ieee.org/document/8567921????QCD????????????к???Χ???3~8μm????????????????У?????????????????????ISBT??????????

???о????????“?????????????????????GaN??ISBT???????????????????????????????????????????????Χ?????????????е????????”

?1 ??a??QCD??????????b??????1.5??????QCD????????????????????????????λ??????純????????????????????????????????????????????????????

?1?е?QCD????????????????267meV??30?????????????????????4.49μm??????????LO?????????????????????????????????????????????????????

????QCD????AlN/Si??111??4?????壬???y????л?????????????MOCVD?????????????720°C?????￡???????????帽?????????????PAMBE??????????????????device layer????

?????????????????7mm x 7mmо??????????????????????壨ICP????????????700μm x 700μm??檔???????????/????Ti/Al????ɡ???涥?????????????????????????????????????????

????????????4.3μm?????2???????????????譚?????????????????о??????18K?????4.14μm???????150K??????4.5μm???????????????????????????????????????????????Σ??????????????????????????ξ??????????????????????18K??????????????FWHM??1.26μm?????????????????????????????150K??????????????????С?

?2 ???????????????????????????????????????????????????????????????????18K??

????????????1000K??????????????????в????????18K?????????162pA????????44μA/W????????????????????????????????????????15.4fA/√Hz???????????????19K??2x10⁸ Jones??

?о??????????????????Щ??????????飺???????????Ч?????????????????????????????????????????????????????????????????????????????ε??????????LO?????????????????????????????????????????????е?????????????????????

?????????

??????????г?-2018?桷

??????LED???????????????ú????????

??????LED???????????????????ú????????

???????????????????г?????-2017?桷