- ?????????????????????????????г?????-2019?桷
- MEMS???????????γ?
- ?????????????????????????????????
- ????????????????-2018?桷
- ??????????е?LiDAR????????????????LiDAR????????
- ???MEMS?????????????????????3D??????????
- ???MEMS???????????γ?
- ??????LED???????????????????ú????????
- ???/??????2018~2019??iPhone??????????????
- 2018??MEMS?г?????127???????δ????????????????
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2015-09-04 19:49:27 ???????? ?????0 ?????
GaN Devices for Power Electronics: Patent Investigation
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???????GaN???????????г???????????У???????????????????IP??????????
GaN????????IP???????δ???г?????????
?????????????????????????????????????Ч?????????????????????????????????????綯????????????????????????????????????????Ч???????????????????????????GaN????????????????????????????????Щ??????????GaN?????Infineon / IR, EPC, GaN Systems, Transphorm?????????г?????????С?????2015???1000?????????????г????????????????????2016????δ??5????????????????93%????2020??GaN?????????????г???????3???????????GaN??????????????????????GaN????????????????????
????й?GaN?????????г????飬??ο???GaN??SiC??????????á????檔
??????????????綯????????????Infineon / IR, Transphorm / Fujitsu??GaN???????????????????Э?饗Infineon / Panasonic, Transphorm / Furukawa???????????????????Transphorm / Fujitsu????????GaN??????????????????????г???y?Σ???????????????????????????????????????????????????GaN?????????г?????????????????????δ??????????????????????????????г???λ????????????IP??????檔
GaN????????IP???
???2015??4?£????Χ???г???1960??GaN???????????????????????????????????????????????Furukawa Electric, International Rectifier, Infineon?????????20????90?????????????GaN???????????????????????????10??????2005-2009???????????????????????????International Rectifier, Power Integrations????????????Panasonic, ROHM, Furukawa Electric, Sumitomo Electric, Toshiba, Toyota?????????????????2010?????????????Mitsubishi Electric, Fujitsu, Transphorm, Avogy, Infineon????????????????????????????????????????????????LED????Seoul Semiconductor???????GaN?????????????????
????GaN?????????????????????????壬??????????????????????????????????????????????????????????????????GaN???????????????????????壬???????????Ч???????????????е????????????GaN?????????????GaN?????????г?????????????????
GaN????????????????μ?IP?????
????200????????????漰GaN????????IP????????????????????????????????????????International Rectifier / Infineon, Panasonic, Furukawa Electric, Sumitomo Electric, Fujitsu, Mitsubishi Electric, Toshiba, Sharp, Fuji Electric, ROHM??Power Integrations?????????????????????GaN??????????????????????????IR / Infineon?????????????GaN????????????????????????????????????????????IP???????????????г?????????
????????GaN????????????????IP??????????????硢???????????????????????????????????????????????????????????????????GaN????????????IP???????????????λ??
GaN?????????????IP??????
?????а???????International Rectifier (IR)???????GaN???????????????IR / Infineon????????????????IP????????GaN?????????г????????????????IP????λ??????δ???????仯?????????Transphorm, Fujitsu??Mitsubishi Electric?????????????????????????????????GaN???????????????Transphorm??GaN???????????????????IP????????????????GaN???????????EPC??GaN Systems??Transphorm?????????????????Furukawa, Fujitsu??On Semiconductor??????????????????GaN?????г????????????λ?????????????????á?Furukawa Electric??г????IP???????ù???????????????????????????Transphorm?????????GaN???????Furukawa Electric???????????????????飬???似???????г?????2010????Fujitsu??Mitsubishi Electric??????????????????????????GaN???????????????δ??????????????IP????
?????????IP???
??????????1960??????????????????о????????е?GaN????????IP???????????????????????????????????????????????????顢???????·???????????????????????????????GaN??????壨SiC, silicon, bulk, sapphire?????з???
GaN????????IP??????????????????????????????????Э?飬??Infineon??Panasonic??Transphorm??Furukawa Electric???????????????GaN???????????????????????????????????????????????г???????????
???GaN???????????????????
IP?????????????
???????????У?????????????????International Rectifier (IR), Infineon, Transphorm, Fujitsu, Efficient Power Conversion (EPC), Power Integrations, GaN Systems, Panasonic??Mitsubishi Electric?????????????????????GaN????????IP??????????????????????????????????IP?????????????????????????????????????????
????????
The authors
Scope of the report
Key features of the report
Objectives of the report
Methodology
Patent search strategy
Patent segmentation
Summary
Introduction
> GaN devices for power electronics
> GaN device market size split by applications markets
> GaN device market 200V vs. 600V
Noteworthy news
IP overview
> Time evolution of patent publications
> Power GaN patent assignees
> IP collaboration network
> Power GaN patent assignee: origin of GaN involvement
> Main power GaN players and related business model
> First appearance of key players in the power GaN IP arena
> Time evolution of patent publications
> Time evolution of granted patents
> Announced GaN transistor products
> Mapping of patenting activity
> Time evolution of patent applications by country
> Time evolution of granted patents by country
> Market domination results from previous IP lead period
> Patent litigations and market evolution
Patent segmentation
• Technology segments
> Patent family split by technology segment
> Time evolution of patent publications split by technology segment
> Main patent assignees by technology segment
> Matrix key IP players / technology segments
> Mapping of patent filings by technology segment
> Industrial supply-chain
• Technical challenges
> Main challenges for lateral GaN devices
> Main challenges for vertical GaN devices
> Main challenges for packaging
> Device parasitic
> Patent family split by technical challenges
> GaN power transistor: patent differentiation of key IP players
> matrix key IP players / technical challenges
Focus on key technology segments
• Power semiconductor devices
• Power components
For each segment:
> Ranking of patent assignees
> Time evolution of main patent assignees
> Degree of specialization of patent assignees
> Mapping of patenting activity
> Countries of priority patents for main patent assignees
> Countries of patent filing for main patent assignees
> Mapping of main current patent holders
> Mapping of main current patent applicants
> Power GaN IP players
> IP collaboration network
> Assignee citation network
> Summary of main assignees' patent portfolio
> Leadership of patent assignees
> Strength index of patent portfolios
> IP blocking potential of main patent assignees
> Potential future plaintiffs
> Granted patents near expiration
Focus on key power GaN IP players
> Timeline evolution of patent publications
> Mapping of granted patents
> Mapping of pending patents
> Geographical distribution of granted patents and pending patents
> Patent portfolio quantity/quality score
> Tentative estimation of market share of GaN device makers
> Financial investment to pure GaN players
Power GaN IP profile of nine key players
• Infineon/International Rectifier
• Efficient Power Conversion (EPC)
• Transphorm
• Fujitsu
• Power Integrations
• GaN Systems
• Panasonic
• Mitsubishi Electric
For each key player:
> Dynamics of their patent applications
> Key features of their patent portfolio
> IP strength
> Collaboration network
> Key patents
> Recent patented technologies
> Noteworthy news
Conclusions
??????????????GaN????????????????????頃????????????E-mail??wangyi#micro-nano.com??#????@????
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